- 0 Results
Lowest price: € 37.95, highest price: € 54.72, average price: € 47.25
1
Perrone, D: 4H-SiC Schottky Barrier Diodes and Junction Fiel
Order
at Orellfuessli.ch
CHF 55.90
(aprox. € 54.72)
Shipment: € 17.621
Order
Provider details
Sponsored link

Perrone, D: 4H-SiC Schottky Barrier Diodes and Junction Fiel - new book

ISBN: 9783838380643

Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high - power and high - frequency electronic devices, with lower power losses and smaller size than their Si or Ga… More...

Nr. A1013647951. Shipping costs:Lieferzeiten außerhalb der Schweiz 3 bis 21 Werktage, , Versandfertig innert 6 - 9 Werktagen, zzgl. Versandkosten. (EUR 17.62)
close (x)
2
4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors - Denis Perrone
Order
at booklooker.de
€ 37.95
Shipment: € 0.001
Order
Provider details
Sponsored link

Denis Perrone:

4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors - First edition

2010, ISBN: 9783838380643

Paperback

[ED: Kartoniert / Broschiert], [PU: LAP LAMBERT Academic Publishing], Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Perro… More...

Shipping costs:Versandkostenfrei, Versand nach Deutschland. (EUR 0.00) Moluna GmbH
close (x)
3
4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors: Process and characterization techniques - Perrone, Denis
Order
at amazon.co.uk
£ 41.00
(aprox. € 48.74)
Shipment: € 5.331
Order
Provider details
Sponsored link
Perrone, Denis:
4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors: Process and characterization techniques - Paperback

2010

ISBN: 9783838380643

LAP LAMBERT Academic Publishing, Paperback, 116 Seiten, Publiziert: 2010-07-26T00:00:01Z, Produktgruppe: Book, 0.18 kg, Verkaufsrang: 9009234, Electronics Engineering, Electronics & Commu… More...

Shipping costs:In stock. Lieferung von Amazon. (EUR 5.33) Amazon.co.uk
close (x)
4
4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors: Process and characterization techniques - Perrone, Denis
Order
at Amazon.de (Intern. Bücher)
€ 45.85
Shipment: € 3.001
Order
Provider details
Sponsored link
Perrone, Denis:
4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors: Process and characterization techniques - Paperback

2010, ISBN: 9783838380643

LAP LAMBERT Academic Publishing, Taschenbuch, 116 Seiten, Publiziert: 2010-07-26T00:00:01Z, Produktgruppe: Buch, 0.4 kg, Elektrotechnik, Ingenieurwissenschaft & Technik, Naturwissenschaft… More...

Shipping costs:Die angegebenen Versandkosten können von den tatsächlichen Kosten abweichen. (EUR 3.00)
close (x)
5
4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors Process and characterization techniques - Perrone, Denis
Order
at Achtung-Buecher.de
€ 49.00
Shipment: € 0.001
Order
Provider details
Sponsored link
Perrone, Denis:
4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors Process and characterization techniques - new book

2010, ISBN: 3838380649

Kartoniert / Broschiert, mit Schutzumschlag 11, [PU:LAP LAMBERT Academic Publishing]

Shipping costs:Versandkostenfrei innerhalb der BRD. (EUR 0.00) MARZIES.de Buch- und Medienhandel, 14621 Schönwalde-Glien
close (x)
1As some platforms do not transmit shipping conditions to us and these may depend on the country of delivery, the purchase price, the weight and size of the item, a possible membership of the platform, a direct delivery by the platform or via a third-party provider (Marketplace), etc., it is possible that the shipping costs indicated by find-more-books.com / find-more-books.com do not correspond to those of the offering platform.
Details of the book
4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors: Process and characterization techniques
Author:
Title:
ISBN:

9783838380643


Silicon Carbide (SiC) is a semiconductor employed for the fabrication of high - power and high - frequency electronic devices, with lower power losses and smaller size than their Si or GaAs counterparts. Recently, SiC substrates with a very low defect density, and with a good control on the doping characteristics became commercially available. Due to these technological improvements, the polytype 4H can be exploited in all its potential in order to fabricate Schottky Barrier Diodes (SBDs) and Junction Field Effect Transistors (JFETs). SiC SBDs with 600 V blocking voltage capabilities have been yet commercialized. This device can provide theoretical blocking voltage values as high as 3300 V with low leakage currents, well beyond the performances of the Si - based counterpart. In particular, SiC - based transistor JFETs can be designed with a vertical structure using the 4H polytype, because of the high values of the on - axis mobility. This book provides to the researchers in the field of SiC power devices an introduction to the process techniques commonly employed for the fabrication and characterization of SiC SBDs and JFETs.

Details of the book - 4H-SiC Schottky Barrier Diodes and Junction Field Effect Transistors: Process and characterization techniques


EAN (ISBN-13): 9783838380643
ISBN (ISBN-10): 3838380649
Hardcover
Paperback
Publishing year: 2010
Publisher: LAP LAMBERT Academic Publishing
116 Pages
Weight: 0,189 kg
Language: eng/Englisch

Book in our database since 2008-07-30T06:01:24-04:00 (New York)
Detail page last modified on 2023-01-03T12:32:03-05:00 (New York)
ISBN/EAN: 9783838380643

ISBN - alternate spelling:
3-8383-8064-9, 978-3-8383-8064-3

< to archive...