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Ion Implantation - Emanuele Rimini
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Emanuele Rimini:

Ion Implantation - new book

1995, ISBN: 0792395204

Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As … More...

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Ion Implantation: Basics to Device Fabrication / Emanuele Rimini / Buch / The Springer International Series in Engineering and Computer Science / HC runder Rücken kaschiert / XIII / Englisch / 1994 - Rimini, Emanuele
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Rimini, Emanuele:

Ion Implantation: Basics to Device Fabrication / Emanuele Rimini / Buch / The Springer International Series in Engineering and Computer Science / HC runder Rücken kaschiert / XIII / Englisch / 1994 - hardcover

1994, ISBN: 9780792395201

[ED: Gebunden], [PU: Springer US], Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the… More...

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Rimini, Emanuele:
Ion Implantation: Basics to Device Fabrication - hardcover

1994

ISBN: 9780792395201

Hard cover, New., Sewn binding. Cloth over boards. 393 p. Contains: Unspecified. The Springer International Engineering and Computer Science, 293., New York, NY, [PU: Springer]

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Ion Implantation : Basics to Device Fabrication - Rimini, E.; Rimini, Emanuele (physics Department, University Of Catania, Italy); Rimini, Emanuele
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Rimini, E.; Rimini, Emanuele (physics Department, University Of Catania, Italy); Rimini, Emanuele:
Ion Implantation : Basics to Device Fabrication - hardcover

1994, ISBN: 0792395204

[EAN: 9780792395201], Nouveau livre, [SC: 14.15], [PU: Springer], Books

NEW BOOK. Shipping costs: EUR 14.15 GreatBookPrices, Columbia, MD, U.S.A. [5352716] [Note: 4 (sur 5)]
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Rimini, Emanuele:
Ion Implantation: Basics to Device Fabrication (the Springer International Series in Engineering and Computer Science) - hardcover

1994, ISBN: 9780792395201

Hardcover, Nouveau livre, As new., [PU: Springer]

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Details of the book
Ion Implantation: Basics to Device Fabrication

Ion Implantation: Basics to Device Fabrication is a collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channeling implants, yield, damage and its annealing, in addition to a host of other topics. Particular attention has been paid to those techniques that provide two-dimensional profiles of damage and of dopants, a careful treatment of silicon based devices, threshold voltage control, shallow junctions, minority carrier lifetime control by metallic ion implants, and high energy implants is given in this work. This book, based on a course preceding the biannual Ion Implantation Technology Conference, is a valuable reference for physicists, chemists, materials scientists, processing, device production, device design, and ion beam engineers interested in any aspect of ion implantation, as well as a secondary text for a graduate course on the subject.

Details of the book - Ion Implantation: Basics to Device Fabrication


EAN (ISBN-13): 9780792395201
ISBN (ISBN-10): 0792395204
Hardcover
Paperback
Publishing year: 1994
Publisher: Springer
410 Pages
Weight: 0,771 kg
Language: eng/Englisch

Book in our database since 2008-03-18T10:06:10-04:00 (New York)
Detail page last modified on 2024-01-31T09:30:44-05:00 (New York)
ISBN/EAN: 9780792395201

ISBN - alternate spelling:
0-7923-9520-4, 978-0-7923-9520-1
Alternate spelling and related search-keywords:
Book author: rimini, emanuele
Book title: ion, basics, rimini, computer science


Information from Publisher

Author: Emanuele Rimini
Title: The Springer International Series in Engineering and Computer Science; Ion Implantation: Basics to Device Fabrication
Publisher: Springer; Springer US
393 Pages
Publishing year: 1994-12-31
New York; NY; US
Language: English
235,39 € (DE)
241,99 € (AT)
260,00 CHF (CH)
Available
XIII, 393 p.

BB; Hardcover, Softcover / Technik/Maschinenbau, Fertigungstechnik; Werkstoffprüfung; Verstehen; basic research; ion; material; radiation; semiconductor; silicon; Characterization and Analytical Technique; Inorganic Chemistry; Nuclear Physics; Anorganische Chemie; Atom- und Molekularphysik; EA; BC

1 Semiconductor Devices.- 1.1 Introduction.- 1.2 Semiconductor Physics.- 1.3 p-n Junction and Diode.- 1.4 Unipolar and Bipolar Transistors.- 1.5 Ion Implantation and Semiconductor Devices.- 1.6 Damage and Yield.- 1.7 Future Trend.- 2 Ion Implanters.- 2.1 Introduction.- 2.2 Ion Sources.- 2.3 High Energy Implanters.- 2.4 Magnetic Analyzer and Beam Transport.- 2.5 Energy Contamination.- 2.6 Scan System and Current Measurement.- 2.7 Wafer Cooling.- 2.8 Wafer Charging.- 2.9 Uniformity Control and Mapping.- 2.10 Contaminants and Yield.- 2.11 Plasma Immersion Ion Implantation.- 3 Range Distribution.- 3.1 Introduction.- 3.2 Elastic Stopping Power.- 3.3 Electronic Energy Loss.- 3.4 Depth Profile of Implanted Ions.- 3.5 Penetration Anomalies.- 3.6 Channeling Implants.- 3.7 Lateral Spreading.- 3.8 Simulation of Range Distribution.- 4 Radiation Damage.- 4.1 Introduction.- 4.2 Collision Cascade.- 4.3 Damage Distribution.- 4.4 Crystalline Defects.- 4.5 Primary Defects.- 4.6 Hot Implants.- 4.7 Ion Beam Induced Enhanced Crystallization.- 4.8 Ion Implantation into Localized Si Areas.- 5 Annealing and Secondary Defects.- 5.1 Introduction.- 5.2 Solid Phase Epitaxial Growth of Amorphous Silicon.- 5.3 Annealing of Low-Dose Heavy - Ion Implant.- 5.4 Regrowth of Amorphous Layer Under a Mask.- 5.5 Annealing of Heavily Disordered Regions.- 5.6 Rapid Thermal Processing.- 5.7 Impurity Diffusion During Annealing.- 5.8 Interaction of Impurities with Ion Implanted Defects.- 5.9 Defect Engineering.- 6 Analytical Techniques.- 6.1 Introduction.- 6.2 Secondary Ion Mass Spectrometry.- 6.3 Spreading Resistance Profilometry: One and Two Dimensional Analyses.- 6.4 Carrier and Mobility Profiles.- 6.5 Rutherford Backscattering and Channeling Effect.- 6.6 Transmission Electron Microscopy.- 7 Silicon Based Devices.- 7.1 Introduction.- 7.2 Threshold Voltage Control in MOSFET.- 7.3 Short Channel Effects.- 7.4 Shallow Junctions.- 7.5 Complementary MOS Devices and Technology.- 7.6 Lifetime Engineering in Power Devices.- 7.7 High Energy Implant Applications.- 7.8 High-Speed Bipolar Transistors.- 8 Ion Implantation in Compound Semi-Conductor and Buried Layer Synthesis.- 8.1 Introduction.- 8.2 Ion Implantation in GaAs.- 8.3 Ion Implantation in InP.- 8.4 Isolation of III-V Semiconductors.- 8.5 Isolation of Superlattice and Quantum Well Structures.- 8.6 Synthesis of Buried Dielectric.- 8.7 Devices in SOI Substrates.- 8.8 Buried Metal Layer Formation.- 8.9 Compound Semiconductor Based Devices.- Selected References.- References.

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