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Modeling of Electrical Overstress in Integrated Circuits - Carlos H. Diaz, Charvaka Duvvury, Sung-Mo (Steve) Kang
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Carlos H. Diaz, Charvaka Duvvury, Sung-Mo (Steve) Kang:
Modeling of Electrical Overstress in Integrated Circuits - new book

ISBN: 9780792395058

ID: 9780792395058

Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields. Textbooks New, Books~~Technology~~Electrical, Modeling-of-Electrical-Overstress-in-Integrated-Circuits~~Carlos-H-Diaz, 999999999, Modeling of Electrical Overstress in Integrated Circuits, Carlos H. Diaz, Charvaka Duvvury, Sung-Mo (Steve) Kang, 0792395050, Springer US, , , , , Springer US

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Modeling of Electrical Overstress in Integrated Circuits - Carlos H. Diaz, Sung-Mo (Steve) Sung-Mo (Steve) Kang
book is out-of-stock
(*)
Carlos H. Diaz, Sung-Mo (Steve) Sung-Mo (Steve) Kang:
Modeling of Electrical Overstress in Integrated Circuits - new book

ISBN: 9780792395058

ID: 978079239505

Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields. Carlos H. Diaz, Sung-Mo (Steve) Sung-Mo (Steve) Kang, Books, Science and Nature, Modeling of Electrical Overstress in Integrated Circuits Books>Science and Nature, Springer US

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Modeling of Electrical Overstress in Integrated Circuits - Carlos H. Diaz, Sung-Mo (Steve) Kang
book is out-of-stock
(*)
Carlos H. Diaz, Sung-Mo (Steve) Kang:
Modeling of Electrical Overstress in Integrated Circuits - new book

ISBN: 9780792395058

ID: 978079239505

Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields. Carlos H. Diaz, Sung-Mo (Steve) Kang, Books, Science and Nature, Modeling of Electrical Overstress in Integrated Circuits Books>Science and Nature, Springer

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Modeling of Electrical Overstress in Integrated Circuits - Carlos H. Diaz#Charvaka Duvvury#Sung-Mo (Steve) Kang
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Carlos H. Diaz#Charvaka Duvvury#Sung-Mo (Steve) Kang:
Modeling of Electrical Overstress in Integrated Circuits - new book

ISBN: 9780792395058

ID: 150998376

Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields. Modeling of Electrical Overstress in Integrated Circuits Buch (fremdspr.) Bücher>Fremdsprachige Bücher>Englische Bücher, Springer

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Modeling of Electrical Overstress in Integrated Circuits - Carlos H. Diaz; Sung-Mo (Steve) Kang; Charvaka Duvvury
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Carlos H. Diaz; Sung-Mo (Steve) Kang; Charvaka Duvvury:
Modeling of Electrical Overstress in Integrated Circuits - new book

ISBN: 9780792395058

ID: 9780792395058

Engineering; Circuits and Systems; Electrical Engineering VLSI, development, integrated circuit, material, modeling, semiconductor, semiconductor devices, simulation, tables, testing Books Book, Springer Science+Business Media

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Details of the book
Modeling of Electrical Overstress in Integrated Circuits
Author:

Diaz, Carlos H.; Duvvury, Charvaka; Sung-Mo (Steve) Kang

Title:

Modeling of Electrical Overstress in Integrated Circuits

ISBN:

Electrical overstress (EOS) and Electrostatic discharge (ESD) pose one of the most dominant threats to integrated circuits (ICs). These reliability concerns are becoming more serious with the downward scaling of device feature sizes. Modeling of Electrical Overstress in Integrated Circuits presents a comprehensive analysis of EOS/ESD-related failures in I/O protection devices in integrated circuits. The design of I/O protection circuits has been done in a hit-or-miss way due to the lack of systematic analysis tools and concrete design guidelines. In general, the development of on-chip protection structures is a lengthy expensive iterative process that involves tester design, fabrication, testing and redesign. When the technology is changed, the same process has to be repeated almost entirely. This can be attributed to the lack of efficient CAD tools capable of simulating the device behavior up to the onset of failure which is a 3-D electrothermal problem. For these reasons, it is important to develop and use an adequate measure of the EOS robustness of integrated circuits in order to address the on-chip EOS protection issue. Fundamental understanding of the physical phenomena leading to device failures under ESD/EOS events is needed for the development of device models and CAD tools that can efficiently describe the device behavior up to the onset of thermal failure. Modeling of Electrical Overstress in Integrated Circuits is for VLSI designers and reliability engineers, particularly those who are working on the development of EOS/ESD analysis tools. CAD engineers working on development of circuit level and device level electrothermal simulators will also benefit from the material covered. This book will also be of interest to researchers and first and second year graduate students working in semiconductor devices and IC reliability fields.

Details of the book - Modeling of Electrical Overstress in Integrated Circuits


EAN (ISBN-13): 9780792395058
ISBN (ISBN-10): 0792395050
Hardcover
Publishing year: 1994
Publisher: Springer-Verlag GmbH
178 Pages
Weight: 0,438 kg
Language: eng/Englisch

Book in our database since 06.11.2007 18:07:32
Book found last time on 12.07.2017 13:12:21
ISBN/EAN: 9780792395058

ISBN - alternate spelling:
0-7923-9505-0, 978-0-7923-9505-8


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