Modeling and Characterization of RF and Microwave Power FETs - hardcover

ISBN: 9780521870665

[ED: Hardcover], [PU: Cambridge University Press], This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techni… More...

[ED: Hardcover], [PU: Cambridge University Press], This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling Group Manager, Jaime A. Plá is Design Organization Manager, and John Wood is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE. 388 pages - 137 line diagrams 13 half-tones 150 figures - 254 x 182 mm Versandfertig in 3-5 Tagen, DE, [SC: 0.00], Neuware, gewerbliches Angebot, Offene Rechnung (Vorkasse vorbehalten)<

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ISBN: 9780521870665

This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implement… More...

This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling Group Manager, Jaime A. Pla is Design Organization Manager, and John Wood is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE. Modeling and Characterization of RF and Microwave Power FETs Aaen, Peter H. / Pla, Jaime A. / Wood, John, Cambridge University Press<

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2007

ISBN: 9780521870665

Cambridge University Press, Gebundene Ausgabe, Auflage: Illustrated, 380 Seiten, Publiziert: 2007-06-28T00:00:01Z, Produktgruppe: Book, Hersteller-Nr.: 150 b/w illus. 1.76 kg, Verkaufsran… More...

Cambridge University Press, Gebundene Ausgabe, Auflage: Illustrated, 380 Seiten, Publiziert: 2007-06-28T00:00:01Z, Produktgruppe: Book, Hersteller-Nr.: 150 b/w illus. 1.76 kg, Verkaufsrang: 26620, Elektrotechnik, Ingenieurwissenschaft & Technik, Naturwissenschaften & Technik, Kategorien, Bücher, Verschiedenes, Format: Illustriert, Cambridge University Press, 2007<

Shipping costs:Auf Lager. Die angegebenen Versandkosten können von den tatsächlichen Kosten abweichen. (EUR 3.00)

2007, ISBN: 9780521870665

Cambridge University Press, Gebundene Ausgabe, Auflage: Illustrated, 380 Seiten, Publiziert: 2007-06-28T00:00:01Z, Produktgruppe: Book, Hersteller-Nr.: 150 b/w illus. 1.76 kg, Verkaufsran… More...

Cambridge University Press, Gebundene Ausgabe, Auflage: Illustrated, 380 Seiten, Publiziert: 2007-06-28T00:00:01Z, Produktgruppe: Book, Hersteller-Nr.: 150 b/w illus. 1.76 kg, Verkaufsrang: 26620, Elektrotechnik, Ingenieurwissenschaft & Technik, Naturwissenschaften & Technik, Kategorien, Bücher, Verschiedenes, Format: Illustriert, Cambridge University Press, 2007<

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ISBN: 9780521870665

This book was the first to be devoted to the compact modeling of RF power FETs. Technology Technology eBook, Cambridge University Press

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